New Silicon Carbide Qubit Brings Us One Step Closer To Quantum Lattice
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Most qubits, which are the quantum particles central to the function of quantum computers, only operate on superconducting materials. Superconductors work best at extremely low temperatures. In order to get around this, the researchers looked into using defects in silicon carbide to hold the qubits in their respective places instead. This is not only simpler, but it makes the machines far more cost-effective as well.
Silicon carbide, or SiC, is not new to the quantum computing world. It's been explored as a potential holder of qubits for quantum computers for some time now. However, it wasn't until researchers from the Linköping University in Sweden discovered that the could slightly modify the structural properties of silicon carbide to make it hold the qubits perfectly.
Essentially, the researchers are making atom-level modifications to the silicon carbide to ensure that they are able to hold the qubits in place. They're making atom-sized defects in the material in which they can hold a qubit.
Now scientists have found a new technique to get qubits, the basic building blocks of quantum computing, working at room temperature. That means we're a significant step closer to quantum computing for the masses.
The technique focuses a pulsed X-ray beam to a diameter of only 25 nanometers (3,000 to 4,000 times narrower than a human hair), allowing researchers to observe what happens when they create and manipulate an atomic defect within the silicon carbide crystal lattice. This action forces the surrounding atoms to rearrange themselves, which strains the material.
Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.
Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing1, secure networks2,3 and nanosensing4,5. For many of these applications it is necessary to have control over single emitters with long spin coherence times. Such single quantum systems have been realized using quantum dots6, colour centres in diamond7, dopants in nanostructures8 and molecules9. More recently, ensemble emitters with spin dephasing times in the order of microseconds and room-temperature optically detectable magnetic resonance (ODMR) have been identified in silicon carbide (SiC)10,11,12, a compound being highly compatible to up-to-date semiconductor device technology. Until recently, however, the engineering of such spin centres in SiC on the single-emitter level has remained elusive13.
\"Vacancy\" is a sign you want to see when searching for a hotel room on a road trip. When it comes to quantum materials, vacancies are also something you want to see. Scientists create them by removing atoms in crystalline materials. Such vacancies can serve as quantum bits or qubits, the basic unit of quantum technology. googletag.cmd.push(function() { googletag.display('div-gpt-ad-1449240174198-2'); }); Researchers at the U.S. Department of Energy's (DOE) Argonne National Laboratory and the University of Chicago have made a breakthrough that should help pave the way for greatly improved control over the formation of vacancies in silicon carbide, a semiconductor.
Semiconductors are the material behind the brains in cell phones, computers, medical equipment and more. For those applications, the existence of atomic-scale defects in the form of vacancies is undesirable, as they can interfere with performance. According to recent studies, however, certain types of vacancies in silicon carbide and other semiconductors show promise for the realization of qubits in quantum devices. Applications of qubits could include unhackable communication networks and hypersensitive sensors able to detect individual molecules or cells. Also possible in the future are new types of computers able to solve complex problems beyond the reach of classical computers.
\"Scientists already know how to produce qubit-worthy vacancies in semiconductors such as silicon carbide and diamond,\" said Giulia Galli, a senior scientist at Argonne's Materials Science Division and professor of molecular engineering and chemistry at the University of Chicago. \"But for practical new quantum applications, they still need to know much more about how to customize these vacancies with desired features.\"
In silicon carbide semiconductors, single vacancies occur upon the removal of individual silicon and carbon atoms in the crystal lattice. Importantly, a carbon vacancy can pair with an adjacent silicon vacancy. This paired vacancy, called a divacancy, is a key candidate as a qubit in silicon carbide. The problem has been that the yield for converting single vacancies into divacancies has been low, a few percent. Scientists are racing to develop a pathway to increase that yield.
Lee coupled the various codes, building on the work of MICCoM scientists Galli and de Pablo. Over the years, several other scientists were also involved in code coupling, including Francois Gygi at the University of California, Davis, and Jonathan Whitmer at Notre Dame University. The outcome is an important and powerful new toolset combining quantum theory and simulations for investigating vacancy formation and behavior. This will be applicable to not only silicon carbide, but other promising quantum materials.
Our group is primarily concerned with understanding electron and nuclear spin dynamics in semiconductors and molecules as well as engineering quantum states for information processing and sensing applications. Our experimental program combines quantum optics with electron-spin resonance, materials engineering, and nanofabrication. We are focused on developing experimental tools and uncovering new systems that could expand the technological impact of quantum coherence in emerging material systems. Certain point defects in semiconductors, such as the nitrogen vacancy center in diamond or the neutral divacancy in silicon carbide, exhibit long-lived spin coherence that persist up to room temperature. The ability to design individual quantum states and their hosts with the power of chemical synthesis offers new opportunities for the field, spanning quantum sensing, communication, and computing. Harnessing these spin states as atomic-scale probes of electromagnetic fields promises to lead to nanoscale nuclear magnetic resonance, new tools for bio-sensing, and a better understanding of semiconductor electronics.
We are exploring defects in a variety of wide-bandgap materials, such as the divacancy in silicon carbide (SiC). We investigate these defects for both fundamental and applied studies of quantum information processing as well as for developing hybrid quantum systems and nanoscale sensing.
Recently, Argonne National Lab's Q-NEXT demonstrated the component needed to make possible a quantum intranet among 10-milliKelvin superconducting quantum computers. Communications of superpositions at 10 milliKelvins (-459 degrees Fahrenheit) is not feasible among superconducting quantum computers. By making the temperature 1,000 times warmer (10 Kelvins, or -442 degrees Fahrenheit), Argonne National Lab's silicon carbide (SiC)-based intranet is feasible, according to the researchers.
\"The error rate of quantum communications in SiC at 10 degrees Kelvin is now on par with superconducting gate-level logic among qubits at 10 milliKelvins,\" said Bluhm. \"This was the crucial step needed to vindicate the potential of solid-state semiconductor-based quantum computing. Notably, this demonstrated performance surpasses the theoretical requirements for large-scale quantum computing with real-time quantum error correction.\"
The key to the unusual capabilities of silicon carbide is its atomic lattice, which combines silicon atoms and carbon atoms in over 250 different lattice structures, all with 50/50 silicon to carbon percentages, but all with different electrical/optical properties. SiC is routinely doped with nitrogen, phosphorus, beryllium, boron, aluminum, or gallium to further fine-tune its electronic and optical properties. SiC lattices also contain divacancies (two vacancies side-by-side), which are used to preserve the coherence of its qubits' five-second-long spin state. 59ce067264
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